advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 35v ultra_low on-resistance r ds(on) 4m fast switching characteristic i d 24a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 35 /w data and specifications subject to change without notice 200809303 1 AP9418GM rating rohs-compliant product 35 20 24 parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 continuous drain current 3 19 pulsed drain current 1 60 storage temperature range 3.6 -55 to 150 thermal data parameter total power dissipation operating junction temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =16a - - 4 m ? ? ,
AP9418GM fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 000111 v ds , drain-to-source voltage (v) i d , drain current (a) v g = 4.0 v 10v 7.0 v 6.0 v 5.0 v t a =25 o c 0 10 20 30 40 001122 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0 v 6.0 v 5.0 v v g = 4 .0 v 2 3 4 5 6 246810 v gs , gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9418GM q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =15v v ds =20v v ds =28v 0 400 800 1200 1600 2000 2400 2800 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =125
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 9418 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence e meet rohs requirement for low voltage mosfet only
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